Nanoelectronic Device Applications Handbook
James E. Morris (Redaktør) ; Krzysztof Iniewski (Redaktør)
- Vår pris
- 3713,-
(Innbundet)
Fri frakt!
Leveringstid:
Usikker levering*
*Vi bestiller varen fra forlag i utlandet.
Dersom varen finnes, sender vi den så snart vi får den til lager
(Innbundet)
Fri frakt!
Leveringstid:
Usikker levering*
*Vi bestiller varen fra forlag i utlandet.
Dersom varen finnes, sender vi den så snart vi får den til lager
The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include:
Nanoscale advances in current MOSFET/CMOS technology
Nano capacitors for applications such as electronics packaging and humidity sensors
Single electron transistors and other electron tunneling devices
Quantum cellular automata and nanomagnetic logic
Memristors as switching devices and for memory
Graphene preparation, properties, and devices
Carbon nanotubes (CNTs), both single CNT and random network
Other CNT applications such as terahertz, sensors, interconnects, and capacitors
Nano system architectures for reliability
Nanowire device fabrication and applications
Nanowire transistors
Nanodevices for spintronics
The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries.
This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
- FAKTA
-
Utgitt:
2013
Forlag: CRC Press Inc
Innbinding: Innbundet
Språk: Engelsk
Sider: 940
ISBN: 9781466565234
Format: 25 x 18 cm
- KATEGORIER:
- VURDERING
-
Gi vurdering
Les vurderinger
«
"... an outstanding, edited collection of state-of-the-art contributions. ... The material provides an excellent overview of the broadly defined field of nanoelectronic devices. ... a comprehensive handbook that is a great resource for students and researchers. Its well-balanced and clear presentations will attract both engineers and scientists of diverse backgrounds."
—Igor Zutic, University at Buffalo, State University of New York, USA, from ASME's Journal of Nanotechnology in Engineering and Medicine, August 2013, Vol. 4"The book covers an extremely large number of topics in nanodevices and their applications. For a person with an engineering background, it will be very useful if he or she wants to start to go in deep and understand the current state of the art of research and technology development in this field. ... I highly recommend it."
—Johan Liu, Professor and Head, Bionano Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden"Nanotechnology has become the foundation for semiconductor logic and memory devices and systems as more and more functionality is desired in smaller and smaller dimensions. This book eloquently describes the fundamental building blocks of future electronic and magnetic devices, providing details on their principles and fabrication and subsequent integration. It is a great resource for researchers and educators in the field of emerging nanoelectronic devices."
—Santosh K. Kurinec, Rochester Institute of Technology, New York, USA"This volume is a unique assembly of topics ranging from present-day nanodevices used commercially today, new nanomaterials such as semiconductor nanowires to carbon-based electronics, and to potential future technologies based on entirely new concepts of information processing such as single electron devices, phase change devices, nanomagnetics, spintronics, and quantum computing. The reader should find a wealth of current topics in nanoelectronics within this handbook, which will serve as an invaluable reference on this ubiquitous technology."
»
—From the Foreword by Stephen M. Goodnick, IEEE Nanotechnology Council President (2012–2013)
Section I Nano-CMOS Modeling
Validation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.org
Alejandro Rodriguez and Hasina F. Huq
Comparative Analysis of Mobility and Dopant Number Fluctuation Models for
the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device
Nabil Ashraf, Dragica Vasileska, Gilson
Wirth, and Purushothaman Srinivasan
Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of
16-nm-Gate MOSFET Devices
Yiming Li
Section II Nano-CMOS Technology
Bottom-Up Approaches for CMOS
Scaling in the Nanoscale Era
Mrunal A. Khaderbad and V. Ramgopal Rao
Study of Lanthanum Incorporated HfO2
Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device
A. Srivastava and Y. Malhotra
Low-Power Reliable Nano Adders
Azam Beg, Mawahib Hussein Sulieman, Valeriu Beiu, and Walid Ibrahim
Section
III Nano Capacitors
Package-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-Dielectrics
Himani
Sharma, P. Markondeya Raj, Parthasarathi Chakraborti, Yushu Wang, and Rao Tummala
Modified Carbon Nanostructures
for Display and Energy Storage
Sivaram Arepalli
Production and Characterization of Nanoparticle Dispersions
of Organic Semiconductors for Potential Applications in Organic Electronics
Muhammad Hassan Sayyad, Fazal Wahab, Munawar
Ali Munawar, Muhammad Shahid, Jamil Anwar Chaudry, Khaulah Sulaiman, Zubair Ahmad, and Abdullah Mohamed Asiri
Investigation
of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS Reliability
Gang Li,
Ulrik Hanke, and Xuyuan Chen
Section IV Terahertz Systems and Devices
Nano Antennas for Energy Conversion
Mario Bareiss, Andreas Hochmeister, Gunther Jegert, Gregor Koblmuller, Ute Zschieschang, Hagen Klauk, Bernhard Fabel, Giuseppe
Scarpa, Wolfgang Porod, and Paolo Lugli
Ballistic Transistor Logic for Circuit Applications
David Wolpert
and Paul Ampadu
Section V Single Electron Transistors and Electron Tunneling Devices
Simultaneously
Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration
Mitsuki
Ito, Shunsuke Akimoto, Ryutaro Suda, and Jun-Ichi Shirakashi
High-Resistive Tunnel Junctions for Room-Temperature-Operating
Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles
P. Santosh Kumar Karre, Daw
Don Cheam, Manoranjan Acharya
Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., a startup company in Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research Inc., an organization of high-tech events covering communications, microsystems, optoelectronics, and sensors. Dr. Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, Simon Fraser University, and PMC-Sierra, Inc. He has published more than 100 research papers in international journals and conferences. He holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. He is a frequent invited speaker, has consulted for multiple organizations internationally, and has written and edited several books.